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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJ15001 www..com DESCRIPTION *With TO-3 package *Complement to type MJ15002 *Wide area of safe operation APPLICATIONS *For high power audio,disk head positioners and other linear applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC IB IE PD Ti Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Emitter current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 140 140 5 15 5 -20 200 200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.875 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.2A ;IB=0 IC=4A; IB=0.4A IC=4A ; VCE=2V VCE=140V; IB=0 VCE=140V; VBE(off)=1.5V TC=150 VEB=5V; IC=0 IC=4A ; VCE=2V VCE=40Vdc,t=1s, Nonrepetitive Is/b Second breakdown collector current With base forward biased VCE=100Vdc,t=1s, Nonrepetitive COB fT Output capacitance Transition frequency IE=0 ; VCB=10V;f=1.0MHz IC=0.5A ; VCE=10V;f=0.5MHz 2 0.5 25 5 MIN 140 www..com MJ15001 SYMBOL VCEO(SUS) VCE(sat) VBE ICEO ICEX IEBO hFE TYP. MAX UNIT V 1.0 2.0 0.25 0.1 2.0 0.1 150 V V mA mA mA A 1000 pF MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www..com MJ15001 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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